Our PECVD oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing, and is often used during the semiconductor manufacturing process to form intra-metal dielectric stacks. PECVD oxide is also used in MEMS and surface micro-machining processes. Our PECVD oxide films offer you greater process flexibility and can be combined with many of our other films including PECVD nitride, LPCVD nitride, and PVD metals.

Specifications

Thickness range: 100Å - 3µm
Thickness tolerance: +/-7%
Within wafer uniformity: +/-7% or better
Wafer to wafer uniformity: +/-7% or better
Sides processed: One
Refractive index: 1.456 (Standard), 1.5+/-.02 (Carbon doped)
Film stress: -400MPa (Compressive)
Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm, 300mm
Wafer thickness: 100µm - 2,000µm
Wafer material: Silicon, Silicon on Insulator, Quartz
Temperature: 300C° - 400C°
Gases: Silane, Nitrous oxide
Equipment: PlasmaTherm batch PECVD deposition tool

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