Our Stoichiometric LPCVD Nitride can be a very effective insulator and works great as a KOH etch mask when deposited over thermal oxide. This versatile film can be used for building MEMS devices or as a tool for defining active regions during field oxidation. As with all of our films, we have worked hard to develop a stable and consistent Stoichiometric LPCVD Nitride process that can be used for many applications.

With our fast lead-time you can feel confident using our Stoichiometric LPCVD Nitride throughout your device fabrication process. We encourage you to take advantage of our process reservation options, and pre-schedule your nitride runs before your wafers arrives at our facility.

Specifications

Thickness range: 50Å - 4500Å
Thickness tolerance: +/-5%
Within wafer uniformity: +/-5% or better
Wafer to wafer uniformity: +/-5% or better
Sides processed: both
Refractive index: 2.00 +/-.02
Film stress: <800MPa Tensile Stress
Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
Wafer thickness: 100µm - 2,000µm
Wafer material: Silicon, Silicon on Insulator, Quartz
Temperature: 800C°
Gases: Dichlorosilane, Ammonia
Equipment: Horizontal vacuum furnace


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